Abstract:
With the huge advancement in memory storage devices, non-volatile memory is
encouraging data storage and processing devices. Nonvolatile memory has a wide
advantage over silicon-based flash memory such as SRAM, DRAM, etc. This special
type of memory requires no external power supply to maintain store data than another
silicon-based flash volatile memory. In recent years various nonvolatile memories
(NVMs) have been studied such as FeRAMs, MRAMs, STTRAMs, RRAMs. But
resistive random-access memory (RRAM) has a greater advantage over other non volatile memory due to scalability and other performance parameters. In this thesis a
Fe doped nickel oxide-based RRAM is designed and investigated, this cell develops
either valence change mechanism (VCM) based conduction filament or electrochemical
metallization-based filament. The vibrational mode of the NiO/FTO film has been
carried out using Raman Spectroscopy. The Energy band calculates by using the Tauc
Relation from the absorbance result of the Ultraviolet-Visible Spectroscopy. The
optical characteristics of the deposited films were investigated by photoluminescence
spectroscopy.
