Synthesis and Characterization of Transition Metal Oxide Resistive Random-Access Memory

Abstract

With the huge advancement in memory storage devices, non-volatile memory is encouraging data storage and processing devices. Nonvolatile memory has a wide advantage over silicon-based flash memory such as SRAM, DRAM, etc. This special type of memory requires no external power supply to maintain store data than another silicon-based flash volatile memory. In recent years various nonvolatile memories (NVMs) have been studied such as FeRAMs, MRAMs, STTRAMs, RRAMs. But resistive random-access memory (RRAM) has a greater advantage over other non volatile memory due to scalability and other performance parameters. In this thesis a Fe doped nickel oxide-based RRAM is designed and investigated, this cell develops either valence change mechanism (VCM) based conduction filament or electrochemical metallization-based filament. The vibrational mode of the NiO/FTO film has been carried out using Raman Spectroscopy. The Energy band calculates by using the Tauc Relation from the absorbance result of the Ultraviolet-Visible Spectroscopy. The optical characteristics of the deposited films were investigated by photoluminescence spectroscopy.