Emerging 2D Bismuth Oxychalcogenides: Structural and Optical Properties for Optoelectronic Applications

Abstract

Of the two-dimensional layered chalcogenides, bismuth oxide sulfide (Bi2O2S) has special characteristics. When compared to other 2D layered sulfides, Bi2O2S shows the best carrier mobility, maximum environmental stability, and an adjustable band gap, making them extremely promising materials for usage in electrical and optoelectronic systems. The use of Bi2O2S in optical applications has demonstrated significant promise. In order to explore Bi2O2S material for optoelectronic applications, these properties offered new insights. We have synthesized the Bi2O2S by adjusting the concentration of the anion (S). The synthesized nanostructures' crystallographic structure and vibrational modes are investigated through the analysis of XRD diffractograms and Raman spectra. The optical characteristics, such as transmission and absorption, are measured and examined using the UV-visible spectrum. We calculated the refractive index and reflectivity. To investigate how anion concentration affects emission spectra, photoluminescence spectroscopy (PL) is used. To observe the chemical characteristics defects, FTIR is done