Investigation of Doped (III-V) Group Elements Emissive Layer for Visible LED Applications

Abstract

This study Sb2S3 was prepared by applying hydrothermal technique with different concentration of Ag as a doping impurity to improve its optical and electrical properties to be used in optoelectronics for LED applications. FTIR spectra was used to analyze the vibrations of chemical bonds present in the different groups in the sample. The intensity of the peaks is reduced with the increase in doping concentration, this is because the strength of chemical bonds decreases because of intermolecular transition of groups present in the sample. Optical properties were studied by UV-Vis and PL spectroscopy. UV-vis spectra was used to calculate bandgap that comes out between 2.5-1.9 eV. The bandgap was reduced with the increase in doping concentration of Ag which indicate its good compatibility for LED applications. IV measurements were used to analyze IV characteristics of the samples and to find out the turn on voltage of the device. SEM results were helpful in analyzing the surface morphology of the samples and measuring the particle size. The device was characterized by electroluminescence spectra which confirmed the red emission from LEDs having emissive layers of undoped and doped Sb2S3. So the materials have bright future for visibe LED applications.