Electron transport properties of stacked 2 dimensional materials

Abstract

Graphene; a material with a high carrier mobility, having zero band gap drawback. Whereas, Boron Nitride with an insulating behavior, having a wide band gap opening. To control the band gap of grapheme without affecting the carrier mobility, Graphene/ Boron Nitride (grapheme/BN) hetero bilayers (HBLs) are formed. In these HBLs the layer of graphene is already doped with BN as well. First Principles calculations show that the band gap and electron effective mass can be modulated according to the need by just changing their stacking arrangement and the inter layer spacing between BN and hybrid layer of graphene. The results show that the tunability of graphene band gap have a linear dispersion relation with handsome band gap opening for a specific stable stacking pattern and this is a promising feature for futuristic Nano devices.