Synthesis and Characterization of CoSe Quantum Dots Coupled with 2-D Materials for Photoelectrochemical Applications

Abstract

Quantum dots have exhibited excellent and efficient features to realize next-generation optoelectronic and electrochemical devices. However, they are prone to agglomerate and are fragile. Due to this their interaction with the surrounding environment to perform a particular function is often limited. They can be coupled with 2-D materials to enhance their performance in above mentioned applications to develop photoelectrochemical technologies and storage devices, this project has produced and analyzed CoSe quantum dots linked to number of several materials, including NiSe2, MoS2, and GO. We have investigated and evaluated how different substrate types affect different CoSe quantum dot properties. We examined the structural and morphological characteristics using RAMAN and XRD. The diffraction peaks of CoSe coupled with MOS2, NiSe2, and GO are seen in the X-ray diffractogram is useful in determining the prepared materials' crystallized size. CoSe2@MOS2 has an estimated crystallization size of 18.8 nm, CoSe2@NiSe2 of 12.48 nm, and CoSe2@GO of 15.8 nm. The wider full width half maximum (FWMH) value accounts for the smaller crystallize size. Each sample's absorption spectra were displayed. The connected samples had bandgaps of 2.42, 2.68, and 2.12, respectively, making them appropriate for energy storage uses. Two redox peaks are clearly seen in the CV curves of every material electrode, suggesting that the capacitive characteristics of the composite material demonstrate good battery and charge storage behavior