Abstract:
This project prepares the silicon carbide and MgZnO-based semiconductor
materials for photocatalysis applications. An efficient photocatalytic
material is required for proper working to enhance the efficiency of clean
energy devices. The efficiency of photocatalysis water-splitting reaction
has been limited. However, carbide and zinc oxide-based catalysts are
developed to address such issues and discuss the reaction mechanism. Therefore, in this research work, SiC composite is made by hydrothermal
method while MgZnO semiconductor materials are made by sol-gel
method. To analyze the synthesized samples' structural properties, XRD
has been carried out and find out SiC composite and MgZnO materials. RAMAN and UV spectroscopy is used to detect vibrational, rotational, and other states in a molecular system, and materials' optical properties
have been studied, respectively. Further, electrochemical characterizations
include EIS, Linear sweep voltammetry, and cyclic voltammetry. It has
been observed that both materials are actively involved in electrochemical
reactions. It can be concluded that the best performance among the two
prepared samples is given by the model MgZnO. The reason is that
MgZnO behaves like a promising photocatalyst compared to that SiC. Theoretical studies have been performed using Density Functional theory
calculations to study the optical parameters, electronic structure, the
density of states, and band gap
