Magneto Acoustic Analysis in Ion-Implanted Quantum Semiconductor Plasmas

Abstract

In semiconductor quantum plasmas, the instability behavior of magneto-acoustic waves is investigated. We derive the dispersion relation for magneto-acoustic wave behavior ion implantation quantum plasmas semiconductors using Maxwell’s equations and the quantum hydrodynamic model. In an external magnetic field, spin-based exchangecorrelation effects, Bohm tunneling potential, Fermi statistical pressure, and Landau Quantization. The process of ion-implantation modifies the structure and characteristics of quantum semiconductors, which are advantageous for the creation of integrated circuits (ICs), metallic nanoparticles, nanoclusters (NCs), digital and storage chips, and their possible uses in a range of technological domains. The semiconductor medium is developed in this work as a plasma system. Numerous factors have a major impact on the growth rate and damping. Due to its many applications, the quantum aspects of plasma physics opened up a new field of study. For example, collision frequency, implantation density, tunneling effect, and external magnetic field. The effects of these parameters have been depicted in graphical representation