Synthesis and Characterization of CoSe QuantumDots Coupled with 2-DMaterials forPhotoelectrochemical Applications

Abstract

Quantum dots have exhibited excellent and efficient features to realize next-generationoptoelectronic and electrochemical devices. However, they are prone to agglomerate andarefragile. Due to this their interaction with the surrounding environment to performa particularfunction is often limited. They can be coupled with 2-D materials to enhance their performancein above mentioned applications to develop photoelectrochemical technologies andstoragedevices, this project has produced and analyzed CoSe quantum dots linked to number of several materials, including NiSe2, MoS2, and GO. We have investigated and evaluated howdifferent substrate types affect different CoSe quantum dot properties. We examined the structural andmorphological characteristics using RAMAN and XRD. The diffraction peaks of CoSe coupledwith MOS2, NiSe2, and GO are seen in the X-ray diffractogram is useful in determiningtheprepared materials' crystallized size. CoSe2@MOS2 has an estimated crystallization size of 18.8nm, CoSe2@NiSe2 of 12.48 nm, and CoSe2@GO of 15.8 nm. The wider full widthhalfmaximum (FWMH) value accounts for the smaller crystallize size. Each sample's absorptionspectra were displayed. The connected samples had bandgaps of 2.42, 2.68, and2.12, respectively, making them appropriate for energy storage uses. Two redox peaks are clearlyseenin the CV curves of every material electrode, suggesting that the capacitive characteristics of thecomposite material demonstrate good battery and charge storage behavior